Cyclotron Resonance in Ultrahigh Magnetic Fields

Cyclotron resonance (CR) is a powerful method for providing information on band structure and carrier dynamics via AC conductivity in a magnetic field. It is by far the most direct and accurate method for determing effective masses. Progress in experimental techniques for high magnetic fields has opened up many new possibilities in CR research. The strong quantization of electron energy states in high fields brings about various novel regimes. We are using pulsed ultrahigh magnetic fields higher than 100 T (or 1 megagauss) generated by the single-turn coil technique in collaboration with Dr. Chuck Mielke at the National High Magnetic Field Laboratory in Los Alamos. These megagauss fields have been successfully applied to many different kinds of experiments.

In megagauss elds, the quantum limit is achieved in most cases, so that information on the lowest few Landau levels is obtained. A variety of physical phenomena have been investigated using megagauss CR, including resonant polaron effects in II-VI compounds, field-induced structural phase transitions, a semimetal-semiconductor transition, electron-electron interaction effects, spin-relaxation phenomena, … etc. Furthermore, CR experiments are possible even for “dirty” or low mobility samples, such as diamond or diluted magnetic semiconductors, since the observability condition \omega_c * \tau > 1 can be readily achieved in megagauss fields.

We are currently investigating CR in graphene in ultrahigh magnetic fields. See our recent paper: L. G. Booshehri et al., “Circular-Polarization Dependent Cyclotron Resonance in Large-Area Graphene in Ultrahigh Magnetic Fields.” (arXiv:1110.4522).

Review Articles:

D. J. Hilton, T. Arikawa, and J. Kono, “Cyclotron Resonance,” in: Characterization of Materials, edited by E. N. Kaufmann (John Wiley & Sons, New York, 2012), to be published.

J. Kono and N. Miura, “Cyclotron Resonance in High Magnetic Fields,” in: High Magnetic Fields: Science and Technology, Volume III, edited by N. Miura and F. Herlach (World Scientific, Singapore, 2006), pp. 61-90. (full text)

J. Kono, “Cyclotron Resonance,” in: Methods in Materials Research, edited by E. N. Kaufmann, R. Abbaschian, A. Bocarsly, C.-L. Chien, D. Dollimore, B. Doyle, A. Goldman, R. Gronsky, S. Pearton, and J. Sanchez (John Wiley & Sons, New York, 2001), Unit 9b.2. (abstractfull text)

Regular Journal Articles:

L. G. Booshehri et al., “Circular-Polarization Dependent Cyclotron Resonance in Large-Area Graphene in Ultrahigh Magnetic Fields.” (arXiv:1110.4522)

G. A. Khodaparast et al., “High-Field Cyclotron Resonance Studies of InMnAs-Based Ferromagnetic Semiconductor Heterostructures,” Physica E 21, 978 (2004). (full text)

Y. H. Matsuda et al., “Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films,” Phys. Rev. B 70, 195211 (2004). (abstractfull text)

Y. Sun et al., “Electron-active Cyclotron Resonance in p-type InMnAs in High Magnetic Fields,” Physica E 20, 374 (2004). (full text)

G. D. Sanders et al., “Determining Carrier Densities in InMnAs by Cyclotron Resonance,” Physica E 20, 378 (2004). (full text)

G. D. Sanders et al., “Electronic States and Cyclotron Resonance in -type InMnAs,” Phys. Rev. B 68, 165205 (2003). (abstractfull text)

G. D. Sanders et al., “Theory of cyclotron resonance and magneto-optics in n- and p-type InMnAs in ultrahigh magnetic fields,” J. Superconductivity 16, 449 (2003). (full text)

G. A. Khodaparast et al., “Cyclotron resonance of electrons and holes in paramagnetic and ferromagnetic InMnAs-based films and heterostructures,” J. Superconductivity 16, 107 (2003). (full text)

G. D. Sanders et al., “Theoretical and experimental studies of cyclotron resonance in p-type InAs and InMnAs at ultrahigh magnetic fields,” J. Appl. Phys. 93, 6897 (2003). (abstractfull text)

M. A. Zudov et al., “Ultrahigh field electron cyclotron resonance absorption in In1-xMnxAs films,” Phys. Rev. B66, 161307(R) (2002). (abstractfull text)

J. Kono et al., “High-field cyclotron resonance and valence-band structure in semiconducting diamond,” Phys. Rev. B 48, 10917 (1993). (abstractfull text)

J. Kono et al., “High-field cyclotron resonance and impurity transition in n-type and p-type 3C-SiC at magnetic fields up to 175 T,” Phys. Rev. B 48, 10909 (1993). (abstractfull text)